Contribution to the crystal chemistry of rare earth chalcogenides. I. The compounds with layer structures LnX(2)

Citation
P. Bottcher et al., Contribution to the crystal chemistry of rare earth chalcogenides. I. The compounds with layer structures LnX(2), Z KRISTALL, 215(4), 2000, pp. 246-253
Citations number
55
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ZEITSCHRIFT FUR KRISTALLOGRAPHIE
ISSN journal
00442968 → ACNP
Volume
215
Issue
4
Year of publication
2000
Pages
246 - 253
Database
ISI
SICI code
0044-2968(2000)215:4<246:CTTCCO>2.0.ZU;2-0
Abstract
A number of lanthanide compounds LnX(2) (Ln = Sc, Y, La-Lu; X = S, Se, Te), LnY(2) (Y = P, As, Sb), and LnZ(2), (Z = Si, Ge) are known to crystallize with a structure derivable from only one aristotype, the ZrSSi type. This s tructure type contains square layers of silicon atoms (in general: square l ayers of the element of medium electronegativity). The structural deviation s observed within the different compounds are usually small and principally affect this square layer. The space groups of the derivative structures un der consideration are subgroups of that of the aristotype and the group-sub group relations are outlined. Distortions of the square layers caused by el ectronic reasons can mostly be understood by applying simple electron count ing rules. A number of compounds with chalcogen deficiency LnX(2-delta) is noted, too, in which the occurrence of vacancies in the square layers often leads to even larger superstructures.