Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon

A deep level transient spectroscopy study of defects created by 61 MeV prot on irradiation of tin-doped n-type Czochralski silicon is reported. A compa rison is made with the deep levels observed in irradiated p-n junction diod es fabricated in n-type float-zone silicon, without tin doping. The main co nclusions are that in Sn-doped material, at least two additional deep radia tion centers are introduced at 0.29 +/- 0.01 and 0.61 +/- 0.02 eV below the conduction band. From annealing experiments, it is concluded that these el ectron traps dissociate below 120 degrees C, which is lower than observed b efore for Sn-V related levels. It is demonstrated that the introduction rat es of the well-known radiation defects are significantly smaller in Sn-dope d material. (C) 2000 American Institute of Physics. [S0003-6951(00)01520-5] .