Auger recombination as a probe of the Mott transition in semiconductor nanocrystals

Citation
P. Nemec et al., Auger recombination as a probe of the Mott transition in semiconductor nanocrystals, APPL PHYS L, 76(20), 2000, pp. 2850-2852
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
20
Year of publication
2000
Pages
2850 - 2852
Database
ISI
SICI code
0003-6951(20000515)76:20<2850:ARAAPO>2.0.ZU;2-P
Abstract
We report on picosecond dynamics of photoexcited carriers in CsPbCl3 nanocr ystals in a CsCl host. For low carrier densities, photoexcited carriers for m excitons, which decay with a characteristic time constant of 170 ps at 30 0 K. Under strong photoexcitation, we have observed the Auger recombination with the Auger coefficient C approximate to 10(-29) cm(6) s(-1). We have i dentified the onset of the Auger recombination at the carrier densities of approximate to 10(20) cm(-3) as the Mott-like transition from excitons to e lectron-hole plasma in nanocrystals. (C) 2000 American Institute of Physics . [S0003-6951(00)02520-1].