Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures

Authors
Sun, BQ Jiang, DS Luo, XD Xu, ZY Pan, Z Li, LH Wu, RH
Citation
Bq. Sun et al., Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures, APPL PHYS L, 76(20), 2000, pp. 2862-2864
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
20
Year of publication
2000
Pages
2862 - 2864
Database
ISI
SICI code
0003-6951(20000515)76:20<2862:ILAAOG>2.0.ZU;2-I
Abstract
We have investigated the interband electron transitions in a GaNAs/GaAs sin gle quantum well (QW) by photoluminescence and absorption spectra. The expe rimental results show that the dominant photoluminescence at low temperatur e and high excitation intensity originates from transitions within the GaNA s layer. The interband transition energy for QWs with different well widths can be well fitted if a type-II band line up of GaNAs/GaAs QWs is assumed. (C) 2000 American Institute of Physics. [S0003-6951(00)03220-4].