Local transport and trapping issues in Al2O3 gate oxide structures

Authors
Ludeke, R Cuberes, MT Cartier, E
Citation
R. Ludeke et al., Local transport and trapping issues in Al2O3 gate oxide structures, APPL PHYS L, 76(20), 2000, pp. 2886-2888
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
20
Year of publication
2000
Pages
2886 - 2888
Database
ISI
SICI code
0003-6951(20000515)76:20<2886:LTATII>2.0.ZU;2-Z
Abstract
The bias dependence of interfacial barriers in Al2O3-based metal-oxide-semi conductor structures was studied by ballistic electron emission spectroscop y. Strong image force reductions of the barriers were observed. A conductio n band offset between Al2O3 and Si of 2.78 eV was obtained. Electron trappi ng into levels that overlap the Si band gap and are located near the Si-Al2 O3 interface led to charge densities of similar to 2.5x10(12) cm(-2). (C) 2 000 American Institute of Physics. [S0003-6951(00)01220-1].