Observation of electronic Raman scattering from Mg-doped wurtzite GaN

Electronic Raman scattering experiments have been carried out on both molec ular beam epitaxy and metal-organic chemical vapor deposition-grown Mg-dope d wurtzite GaN samples. Aside from the expected Raman lines, a broad struct ure (full width at half maximum congruent to 15 cm(-1)) observed at around 841 cm(-1) is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. Our experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurt zite GaN is about one-half of its binding energy. (C) 2000 American Institu te of Physics. [S0003- 6951(00)01420-0].