Large and stable field-emission current from heavily Si-doped AlN grown bymetalorganic vapor phase epitaxy

Citation
M. Kasu et N. Kobayashi, Large and stable field-emission current from heavily Si-doped AlN grown bymetalorganic vapor phase epitaxy, APPL PHYS L, 76(20), 2000, pp. 2910-2912
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
20
Year of publication
2000
Pages
2910 - 2912
Database
ISI
SICI code
0003-6951(20000515)76:20<2910:LASFCF>2.0.ZU;2-9
Abstract
We report on the electron field emission (FE) from heavily Si-doped AlN gro wn by metalorganic vapor phase epitaxy. We found that, as the Si-dopant den sity increases, the threshold electric field decreases and, consequently, t he FE current from AlN increases drastically. We show that heavily Si-doped (2.5x10(20) cm(-3)) AlN has a threshold electric field of 34 V/mu m, a max imum FE current density of 4.8 mA/cm(2), and stable FE current (fluctuation : 3%). (C) 2000 American Institute of Physics. [S0003-6951(00)03020-5].