Characterization of electron trap states due to InAs quantum dots in GaAs

Authors
Walther, C Bollmann, J Kissel, H Kirmse, H Neumann, W Masselink, WT
Citation
C. Walther et al., Characterization of electron trap states due to InAs quantum dots in GaAs, APPL PHYS L, 76(20), 2000, pp. 2916-2918
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
20
Year of publication
2000
Pages
2916 - 2918
Database
ISI
SICI code
0003-6951(20000515)76:20<2916:COETSD>2.0.ZU;2-6
Abstract
InAs quantum dots grown in a GaAs matrix are investigated using capacitive transient spectroscopy and transmission electron microscopy (TEM). Two deep levels are detected which are energetically too deep to be the intrinsic e lectron levels of the quantum dots. Both TEM as well as the detailed non-ex ponential behavior of the electron capture indicate that the traps do not r esult from dislocations in the GaAs matrix. We propose that the measured tr ap levels are due to point defects in or near the quantum dots. (C) 2000 Am erican Institute of Physics. [S0003-6951(00)03620-2].