Diamond deep UV photodetectors: reducing charge decay times for 1-kHz operation

Citation
Sp. Lansley et al., Diamond deep UV photodetectors: reducing charge decay times for 1-kHz operation, DIAM RELAT, 9(2), 2000, pp. 195-200
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
9
Issue
2
Year of publication
2000
Pages
195 - 200
Database
ISI
SICI code
0925-9635(200002/03)9:2<195:DDUPRC>2.0.ZU;2-Z
Abstract
Diamond grown by chemical vapour deposition (CVD) methods is thought to be ideal for the fabrication of visible blind, fast deep UV photodetectors. Ho wever, careful device design and selection of high-quality CVD thin film di amond is, in itself, insufficient for the realisation of high performance d evices. Post-growth device treatments are capable of transforming the optoe lectronic properties of the material such that commercially interesting dev ices result. In the present study we have shown that sequentially applied m ethane-air treatments continue to modify both, the gain level and speed of the device. Three such treatments give an optimal gain level, whilst more t reatments than this lead to an improved turn-off speed. For the first time we have demonstrated the successful operation of a CVD diamond photoconduct ive device at at least 1 kHz at 193 nm, a frequency that is required for st ate-of-the-art excimer laser applications at this wavelength. (C) 2000 Else vier Science S.A. All rights reserved.