Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic
effect device (SEED) arrays are demonstrated flip-chip bonded directly onto
1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for
850 nm operation. Some devices are used as input light detectors and other
s serve as output light modulators. The measurement results under applied b
iases show good optoelectronic characteristics of elements in SEED arrays.
Nearly the same reflection spectrum is obtained for the different devices a
t an array and the contrast ratio is more than 1.2:1 after flip-chip bondin
g and packaging. The transimpedance receiver-transmitter circuit can be ope
rated at a frequency of 300 MHz.