730 nm InAlGaAsSQW laser diodes grown by MOVPE using 'ether-free' and conventional 'solution' trimethylindium

SQW GRINSCH laser diodes for high power operation at 730 nm have been fabri cated using atmospheric pressure MOVPE. The SQW InA1GaAs gain region has be en prepared using two different trimethylindium sources, consisting of eith er an N N-dimethyldodecylamine : TMI adduct solution of conventionally manu factured/purified TMI, or solid TMI (diethylether-free synthesis). Both TMI sources address the reduction of contamination associated with the solvent diethylether, commonly used in the preparative route to TMI. Furthermore, devices prepared from ether-free TMI show a lower threshold current and lon ger lifetime for the same waveguide geometry. The lowering of residual oxyg en from TMI is thought to be the most likely reason for these material impr ovements.