Effect of doping with Nb and Dy on the heat capacity of Si

Authors
Glazov, VM Mikhailova, MS
Citation
Vm. Glazov et Ms. Mikhailova, Effect of doping with Nb and Dy on the heat capacity of Si, INORG MATER, 36(4), 2000, pp. 318-321
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
36
Issue
4
Year of publication
2000
Pages
318 - 321
Database
ISI
SICI code
0020-1685(200004)36:4<318:EODWNA>2.0.ZU;2-Q
Abstract
The heat capacity of undoped Si and Si doped with Nh (10(18) cm(-3)) and Dy (10(17) cm(-3)) was measured by differential scanning calorimetry (DSM-2M and Mettler instruments). The phase transition from diamond Si to the high- pressure phase Si II was found to occur in undoped Si between 550 and 650 K . No phase transition was observed in Si doped with Nb or Dy, indicating th at the dopants strengthen the Si lattice, thereby impeding structural chang es.