Citation
Sf. Marenkin et al., Effective distribution coefficient of Te in ZnAs2, INORG MATER, 36(4), 2000, pp. 327-329
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685
→ ACNP
Volume
36
Issue
4
Year of publication
2000
Pages
327 - 329
Database
ISI
SICI code
0020-1685(200004)36:4<327:EDCOTI>2.0.ZU;2-F
Abstract
Te-doped ZnAs2 crystals were prepared by vertical Bridgman growth. The effe
ctive distribution coefficient of Te in a ZnAs2 crystal with a nominal Te c
ontent of 3.7 x 10(-4) wt % Te grown at a solidification rate of 0.5 mm/h w
as determined to be 0.9. Te was shown to act as a donor impurity in ZnAs2.