Energy level alignment and band bending at model interfaces of organic electroluminescent devices

Citation
H. Ishii et al., Energy level alignment and band bending at model interfaces of organic electroluminescent devices, J LUMINESC, 87-9, 2000, pp. 61-65
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF LUMINESCENCE
ISSN journal
00222313 → ACNP
Volume
87-9
Year of publication
2000
Pages
61 - 65
Database
ISI
SICI code
0022-2313(200005)87-9:<61:ELAABB>2.0.ZU;2-S
Abstract
The basic concepts of common vacuum level and band bending in Mott-Schottky (MS) model was experimentally examined for the model interfaces of organic electroluminescent devices by using UV photoemission spectroscopy (UPS) an d Kelvin probe method (KPM). We found that interfacial dipole cannot be neg lected at most organic/metal interfaces and that the potential shift at the interface due to such dipole sometimes reaches over 1 eV in contrast to th e assumption of the common vacuum level in MS model. Based on the observed data, possible origins of the interfacial dipole and general trends of the potential shift against the work function of the electrode metal were propo sed. The band bending and Fermi level alignment were also examined at the i nterfaces between metals (Au, Cu, Ag, Mg, Ca) and TPD(N,N'-bis(3-methylphen yl)-N,N'-diphenyl-[1,1'-bisphenyl]-4,4'-diamine). (C) 2000 Elsevier Science B.V. All rights reserved.