Temperature dependence of four-wave-mixing spectra in ZnO thin films on sapphire substrates grown with laser MBE

Citation
T. Makino et al., Temperature dependence of four-wave-mixing spectra in ZnO thin films on sapphire substrates grown with laser MBE, J LUMINESC, 87-9, 2000, pp. 210-212
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF LUMINESCENCE
ISSN journal
00222313 → ACNP
Volume
87-9
Year of publication
2000
Pages
210 - 212
Database
ISI
SICI code
0022-2313(200005)87-9:<210:TDOFSI>2.0.ZU;2-5
Abstract
We investigated the optical nonlinearity around the excitonic resonance reg ion of ZnO thin films with thickness of about 200 nm grown with laser molec ular beam epitaxy (MBE) method by using four-wave-mixing (FWM) spectroscopy . It is found that the FWM signal can be confirmed in the temperature range (10-294 R) and that its spectra significantly depends on polarization of e xciting pulses. It is suggested, through the dependence, that the induced a nnihilation of a two-photon coherent state of biexcitons plays a negligibly small role in the FWM spectra compared with the excitonic population-grati ng effect. (C) 2000 Elsevier Science B.V. All rights reserved.