Luminescence of free and self-trapped excitons in wide-gap oxides

Citation
A. Lushchik et al., Luminescence of free and self-trapped excitons in wide-gap oxides, J LUMINESC, 87-9, 2000, pp. 232-234
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF LUMINESCENCE
ISSN journal
00222313 → ACNP
Volume
87-9
Year of publication
2000
Pages
232 - 234
Database
ISI
SICI code
0022-2313(200005)87-9:<232:LOFASE>2.0.ZU;2-8
Abstract
Behaviour of the intrinsic emissions of 7.6. 3.45 and 3.6 eV in Al2O3, Y2O3 and Sc2O3, respectively, has been studied under a crystal excitation by 5- 35 eV photons at 8-80 K. In Al2O3 and Y2O3, electrons and holes do nor unde rgo transformation into a self-trapped state, while self-shrunk excitons ar e formed at the direct optical creation of excitons or at the recombination of electrons with holes under the conditions of a high excitation density. In line with the theoretical assumption made by Sumi, manifestations of th e photocreation of spatially correlated self-trapped d-electrons and p-hole s are revealed in the spectra of the tunnel phosphorescence of Sc2O3. (C) 2 000 Elsevier Science B.V. All rights reserved.