High-pressure study of deep emission band at GaAs/partially ordered GaInP interface

We have measured the photoluminescence (PL) spectra of GaAs/GaInP single qu antum wells at pressures up to similar to 5 GPa, and investigated the chara cteristics of the 1.46 eV deep emission band. It has a very long decay time of 200-400 ns. Tn addition, unlike the emission from the GaAs well, a stro ng blueshift of the spectral position with excitation intensity is observed . With increasing pressure, the deep emission shows a sublinear shift towar ds higher energy, while the GaAs well exhibits a linear shift. The pressure -dependent PL behavior at lower excitation intensity is rather similar to t hose observed for partially ordered GaInP alloys. These results suggest tha t the presence of ordered GaInP layers plays an important role in the radia tive recombination at 1.46 eV, and the 1.46 eV deep emission is related to the interface transitions of electrons and holes localized at the heteroint erface. (C) 2000 Elsevier Science B.V. All rights reserved.