Anomalous photoluminescence originating from resonance between X and intermediate states in GaAs/AlAs superlattices

Authors
Ohtani, N Domoto, C Kuroyanagi, K Egami, N Hosoda, M
Citation
N. Ohtani et al., Anomalous photoluminescence originating from resonance between X and intermediate states in GaAs/AlAs superlattices, J LUMINESC, 87-9, 2000, pp. 415-417
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF LUMINESCENCE
ISSN journal
00222313 → ACNP
Volume
87-9
Year of publication
2000
Pages
415 - 417
Database
ISI
SICI code
0022-2313(200005)87-9:<415:APOFRB>2.0.ZU;2-3
Abstract
We report the observation of a novel radiative recombination process in a b iased GaAs/AlAs superlattice. Resonance of X states with an intermediate st ate, which is located in an energy range between Gamma 1 and Gamma 2 states , leads to anomalous photoluminescence properties. The possible origin of t his intermediate state is an impurity state or an L state confined in the G aAs well. (C) 2000 Elsevier Science B.V. All rights reserved.