Phonon-enhanced intraband transitions in InAs self-assembled quantum dots

Phonon-mediated intraband carrier relaxation was studied in InAs/GaAs self- assembled quantum dots (QDs) by combining resonant photoluminescence and ph otoluminescence excitation experiments with high spectral resolution. The p honon-related resonances were found to dominate both the luminescence and e xcitation spectra. Spectral widths of 1LO-phonon peaks are surprisingly sma ll and comparable with the inverse lifetime of the LO phonons in QDs, where as, the multiphonon resonances are much broader most likely reflecting the width of n-phonon density of states. (C) 2000 Elsevier Science B.V. All rig hts reserved.