"Unusual" temperature behavior of the photoluminescence of the InP and InGaAs quantum dots under quasi-resonance excitation

Authors
Davydov, V Ignatiev, IV Kozin, IE Lee, JS Ren, HW Sugou, S Masumoto, Y
Citation
V. Davydov et al., "Unusual" temperature behavior of the photoluminescence of the InP and InGaAs quantum dots under quasi-resonance excitation, J LUMINESC, 87-9, 2000, pp. 522-524
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF LUMINESCENCE
ISSN journal
00222313 → ACNP
Volume
87-9
Year of publication
2000
Pages
522 - 524
Database
ISI
SICI code
0022-2313(200005)87-9:<522:"TBOTP>2.0.ZU;2-G
Abstract
An "unusual" thermal behavior was observed in the photoluminescence of self -assembled III-V quantum dots under quasi-resonant excitation. The effect m anifests itself as a prominent increase of the PL intensity at elevated tem peratures, both in Stokes and anti-Stokes parts of spectra. This effect is observable in both InP and InGaAs quantum dots. A simple general model of s pectral diffusion is proposed to explain this phenomenon. (C) 2000 Elsevier Science B.V, All rights reserved.