Optimum annealing condition for 1.5 mu m photoluminescence from beta-FeSi2balls grown by reactive deposition epitaxy and embedded in Si crystal

Authors
Suemasu, T Iikura, Y Takakura, K Hasegawa, F
Citation
T. Suemasu et al., Optimum annealing condition for 1.5 mu m photoluminescence from beta-FeSi2balls grown by reactive deposition epitaxy and embedded in Si crystal, J LUMINESC, 87-9, 2000, pp. 528-531
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF LUMINESCENCE
ISSN journal
00222313 → ACNP
Volume
87-9
Year of publication
2000
Pages
528 - 531
Database
ISI
SICI code
0022-2313(200005)87-9:<528:OACF1M>2.0.ZU;2-W
Abstract
1.5 mu m photoluminescence (PL) intensity from 100-nm-diameter beta-FeSi2 b alls embedded in Si crystals was greatly improved by 900 degrees C annealin g in accordance with improvement of its crystalline quality. Thermal quench ing of the 1.5 mu m PL intensity for the annealed sample was significantly reduced by annealing compared to the as-grown sample. (C) 2000 Elsevier Sci ence B.V. All rights reserved.