Lattice damage study of implanted InGaAs by means of Raman spectroscopy

We have studied by means of Raman scattering the crystallinity loss induced by ion-beam implantation in the InxGa1-xAs alloy lattice matched to InP. S i+ was implanted at 150 keV with fluences in the 10(12) - 5 x 10(14) cm(-2) range. The Raman scattering signatures of implantation-induced disorder an d the progressive amorphization of the InxGa1-xAs crystal are discussed. Wi th increasing implantation dose, the GaAs-like LO mode exhibits a gradual i ntensity reduction and an asymmetric broadening, while a broad peak emerges at low frequencies corresponding to the activation by the induced disorder of transverse acoustic modes. The Raman scattering measurements have allow ed us to check the full amorphization of the In0.53Ga0.47As for a Si+ impla ntation dose of 5 x 10(14) cm(-2). (C) 2000 Elsevier Science B.V. All right s reserved.