S. Saito et T. Suemoto, Photo-doped carrier dynamics by two-color pump-probe time-resolved Raman scattering measurement in Ge, J LUMINESC, 87-9, 2000, pp. 920-922
We have built up the two-color time-resolved Raman measurement system based
on a mode-locked Ti:sapphire laser. We have applied this system to observe
the effect of initial carrier distribution in the intrinsic germanium. Ram
an scattering intensity reaches maximum at about 2 ps after photoexcitation
and its decay time is about 20 ps. This result was explained in terms of a
diffusion model calculation qualitatively. (C) 2000 Elsevier Science B.V.
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