Near-field observation of luminescence of silicon phthalocyanine dye aggregates at low temperature

Citation
T. Tokizaki et al., Near-field observation of luminescence of silicon phthalocyanine dye aggregates at low temperature, J LUMINESC, 87-9, 2000, pp. 957-959
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF LUMINESCENCE
ISSN journal
00222313 → ACNP
Volume
87-9
Year of publication
2000
Pages
957 - 959
Database
ISI
SICI code
0022-2313(200005)87-9:<957:NOOLOS>2.0.ZU;2-J
Abstract
We have investigated the morphology and the luminescence of silicon phthalo cyanine dye aggregates using a low-temperature scanning near-field microsco pe. We have observed the luminescence spectrum depending on the position in an aggregate at 77 K. The behavior is originated from the energy transfer process among radiative states and nonradiative centers in microscopic doma ins. (C) 2000 Elsevier Science B.V. All rights reserved.