Mechanisms of optical erasure of ionization spectral holes in doped insulating crystals

Authors
Kaplyanskii, AA Basun, SA Happek, U Meltzer, RS Raukas, M
Citation
Aa. Kaplyanskii et al., Mechanisms of optical erasure of ionization spectral holes in doped insulating crystals, J LUMINESC, 87-9, 2000, pp. 983-985
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF LUMINESCENCE
ISSN journal
00222313 → ACNP
Volume
87-9
Year of publication
2000
Pages
983 - 985
Database
ISI
SICI code
0022-2313(200005)87-9:<983:MOOEOI>2.0.ZU;2-T
Abstract
We review recently discovered processes that can lead to the erasure of per sistent spectral holes burnt via two-step ionization (photochemical hole bu rning) in doped insulating crystals. These hole erasure processes are based on photoinduced recharging of ions. Two mechanisms are described here: acc eptor transitions, which occur in the system Li2Ge7O15 : Cr3+, and electron tunneling between impurity ions in different charge states, as observed in CaS : Eu. (C) 2000 Published by Elsevier Science B.V. All rights reserved.