Penetration depth of low-energy electrons into ZnS

The penetration depth of low-energy electrons into ZnS was investigated usi ng the: device structure combined with CaS:Ce emitting layer and ZnS buffer layer. The luminance of the film with ZnS was different from that of the f ilm without a ZnS buffer layer. The properties depend on the thickness of Z nS and the energy of incident electrons at the film surface. The penetratio n depths obtained in this experiment were larger than the depth calculated by Feldman's equation. The difference between the experimental result and t he analysis of Feldman is caused by a difference between the anode voltage and the actual excitation voltage. (C) 2000 Elsevier Science B.V. All right s reserved.