Ultraviolet emission properties in InxGa1-xN epitaxial layer revealed by magnetoluminescence and time-resolved luminescence studies

Two recombination channels (higher- and lower-energy states) have been foun d in the efficient ultraviolet (UV) emission of an In0.08Ga0.92N epitaxial layer. The time-resolved luminescence spectra and the temperature dependenc e of decay time have shown that an energy-transfer process of carriers betw een two states has significantly taken place. The magnetoluminescence studi es have revealed from a large Landau energy shift that the higher-energy st ate is not related to the localized excitons, but is due to an electronic t ransition. (C) 2000 Elsevier Science B.V. All rights reserved.