Steady-state and time-resolved luminescence in InGaN layers

InGaN layers are used as active layers of high brightness in nitride-based LEDs and lasers. Despite the progress in device development many of the fun damental optical properties an not completely understood. InGaN samples wit h different In content are studied by steady-state and time-resolved photol uminescence. The low-temperature photoluminescence spectra show a near band edge emission that shifts to lower energies with increasing In content, ex citation wavelength and delay times. The emission is broader than typical e xcitonic emission from binary material. Temperature ependent measurements i ndicate that the near band edge emission is an overlap of various emission bands with different quenching behaviour. (C) 2000 Elsevier Science B.V. Al l rights reserved.