Excitonic emission of BGaN grown on (0001) 6H-SiC by metal-organic vapor-phase epitaxy

Authors
Honda, T Kurimoto, M Shibata, M Kawanishi, H
Citation
T. Honda et al., Excitonic emission of BGaN grown on (0001) 6H-SiC by metal-organic vapor-phase epitaxy, J LUMINESC, 87-9, 2000, pp. 1274-1276
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF LUMINESCENCE
ISSN journal
00222313 → ACNP
Volume
87-9
Year of publication
2000
Pages
1274 - 1276
Database
ISI
SICI code
0022-2313(200005)87-9:<1274:EEOBGO>2.0.ZU;2-E
Abstract
Reflection and photoluminescence spectra of boron gallium nitride (BGaN) la yers were observed. BGaN layers were grown on (0 0 0 1) 6H-SiC substrates w ithout any buffer layers by metal-organic vapor-phase epitaxy (MOVPE). The emission peaks that originated from free-exciton recombination were observe d in these layers. The band-gap energy of the BGaN layer was larger than th at of the GaN layer. The binding energy of a free exciton in the BGaN layer was 26 meV, which nearly equals that in GaN. (C) 2000 Elsevier Science B.V . All rights reserved.