Reversible bending of Si3N4 nanowire

Authors
Zhang, YJ Wang, NL He, RR Zhang, Q Zhu, J Yan, YJ
Citation
Yj. Zhang et al., Reversible bending of Si3N4 nanowire, J MATER RES, 15(5), 2000, pp. 1048-1051
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914 → ACNP
Volume
15
Issue
5
Year of publication
2000
Pages
1048 - 1051
Database
ISI
SICI code
0884-2914(200005)15:5<1048:RBOSN>2.0.ZU;2-A
Abstract
A reversible bending phenomenon of Si3N4 nanowires on the conductive carbon -formalin microgrid under an illumination of electron beam was observed usi ng a transmission electron microscope. The nanowires exhibit high flexibili ty. The bending deflection is approximately proportional to the square of t he current density (J) of the electron beam. The bending strength of Si3N4 nanowire is much higher than that of bulk Si3N4 materials. The force that b ent the nanowires may be an electrostatic force.