F. Remacle et Rd. Levine, Electronic response of assemblies of designer atoms: The metal-insulator transition and the role of disorder, J AM CHEM S, 122(17), 2000, pp. 4084-4091
Quantum dots present the chemist with the opportunity to synthesize atomic-
like building blocks with made-to-measure electronic properties. For the th
eorists this allows a study of the same Hamiltonian for a range of paramete
rs. Hen we consider a lattice of quantum dots, where the dots can be prepar
ed with a narrow distribution of properties but are never quite identical.
This is unlike an ordered lattice of atoms or molecules. We report computat
ions of the frequency-dependent dielectric response of a two-dimensional ar
ray of quantum dots, as a function of the distance between the dots. When t
he dots are not closely packed, the response is dominated by the Coulomb re
pulsion of electrons (of opposite spin) on a given dot. This gives rise to
an insulator-metal transition as the expanded array is compressed. The inte
rplay between the three effects, the "disorder" due to the size, shape, and
environmental fluctuations of the dots, the coupling of adjacent dots, and
the Coulomb repulsion are studied as functions of the lattice spacing. The
computations are performed in the approximation where each dot carries one
valence electron, but these electrons are fully correlated so as to fully
account for the Coulomb blocking. This is possible by a diagonalization of
the Hamiltonian in a many-electron basis. Comparison is made with experimen
tal results for the dielectric response, as described in a companion to thi
s paper.