Va. Radtsig et Sn. Kostritsa, Mechanism of (OH)-O-center dot formation in the thermal decomposition of (Si-O)(2)Si(C2H5)(O-O-center dot) radicals, KINET CATAL, 41(2), 2000, pp. 242-254
ESR and IR spectroscopy and quantum chemical calculations are used to obtai
n the mechanistic data on the reaction (=Si-O)(2)Si(C2H5)(O-O-.) -->
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The IR bands are assigned CH, by simulating the vibrational spectra of mode
l low-molecular compounds. Quantum chemical calculations provided the data
on the shapes of potential energy surface for the systems under study and t
ransition states. These data are used to interpret the experimental data. T
he title reaction occurs much more readily in the case of organosilicon per
oxy radicals than in the case of their hydrocarbon analogs. Surface silanon
e groups of silica react with ethylene molecules to form the siloxacyclobut
ane group.