Mechanism of (OH)-O-center dot formation in the thermal decomposition of (Si-O)(2)Si(C2H5)(O-O-center dot) radicals

Citation
Va. Radtsig et Sn. Kostritsa, Mechanism of (OH)-O-center dot formation in the thermal decomposition of (Si-O)(2)Si(C2H5)(O-O-center dot) radicals, KINET CATAL, 41(2), 2000, pp. 242-254
Citations number
27
Categorie Soggetti
Physical Chemistry/Chemical Physics","Chemical Engineering
Journal title
KINETICS AND CATALYSIS
ISSN journal
00231584 → ACNP
Volume
41
Issue
2
Year of publication
2000
Pages
242 - 254
Database
ISI
SICI code
0023-1584(200003/04)41:2<242:MO(DFI>2.0.ZU;2-T
Abstract
ESR and IR spectroscopy and quantum chemical calculations are used to obtai n the mechanistic data on the reaction (=Si-O)(2)Si(C2H5)(O-O-.) --> [GRAPHICS] The IR bands are assigned CH, by simulating the vibrational spectra of mode l low-molecular compounds. Quantum chemical calculations provided the data on the shapes of potential energy surface for the systems under study and t ransition states. These data are used to interpret the experimental data. T he title reaction occurs much more readily in the case of organosilicon per oxy radicals than in the case of their hydrocarbon analogs. Surface silanon e groups of silica react with ethylene molecules to form the siloxacyclobut ane group.