Effect of ion mixing by C+ implantation on friction and adhesion of amorphous carbon film on SiO2

Citation
T. Xu et al., Effect of ion mixing by C+ implantation on friction and adhesion of amorphous carbon film on SiO2, MAT SCI E A, 284(1-2), 2000, pp. 51-55
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
ISSN journal
09215093 → ACNP
Volume
284
Issue
1-2
Year of publication
2000
Pages
51 - 55
Database
ISI
SICI code
0921-5093(20000531)284:1-2<51:EOIMBC>2.0.ZU;2-R
Abstract
Amorphous carbon films on the SiO2 substrates have been implanted with C io ns with energy of 110 KeV and fluences ranging from 1 x 10(16) to 1 x 10(17 ) C cm(-2). The effect of ion mixing on the friction behavior of amorphous carbon film and changes in chemical composition and structure were investig ated. The results show that the anti-wear life and adhesion of amorphous ca rbon films on SiO2 substrate were significantly increased by C ions implant ation, especially when the fluence reached 1 x 10(17) C cm(-2) The Si-C che mical bonding across the interface plays the key role in the increase of ad hesion strength and the anti-wear life of amorphous carbon film. The fricti on and wear mechanism of the amorphous carbon film under dry friction was a lso discussed. (C) 2000 Elsevier Science S.A. All rights reserved.