T. Xu et al., Effect of ion mixing by C+ implantation on friction and adhesion of amorphous carbon film on SiO2, MAT SCI E A, 284(1-2), 2000, pp. 51-55
Amorphous carbon films on the SiO2 substrates have been implanted with C io
ns with energy of 110 KeV and fluences ranging from 1 x 10(16) to 1 x 10(17
) C cm(-2). The effect of ion mixing on the friction behavior of amorphous
carbon film and changes in chemical composition and structure were investig
ated. The results show that the anti-wear life and adhesion of amorphous ca
rbon films on SiO2 substrate were significantly increased by C ions implant
ation, especially when the fluence reached 1 x 10(17) C cm(-2) The Si-C che
mical bonding across the interface plays the key role in the increase of ad
hesion strength and the anti-wear life of amorphous carbon film. The fricti
on and wear mechanism of the amorphous carbon film under dry friction was a
lso discussed. (C) 2000 Elsevier Science S.A. All rights reserved.