LOW-TEMPERATURE TIME AND ELECTRIC-FIELD DEPENDENCE OF THE DIELECTRIC-CONSTANT IN AMORPHOUS MATERIALS

We report new behavior of the dielectric properties of amorphous mater ials (SiO2, SiO(x) and polymers) with respect to applied AC and DC fie lds. As reported previously1, we have seen a discontinuous rise, follo wed by a logarithmic relaxation of the dielectric constant upon applic ation of a DC bias. After allowing the capacitance to relax from sever al hours up to a full day, we can sweep through a dielectric ''spectru m'' by varying the DC bias. These sweeps clearly show hole formation l ocated at the previously applied bias voltage. New measurements show t hat this relaxation can be influenced by small temperature oscillation s which increase the relaxation rate.