Study on the optoelectronic properties of amorphous selenium-based photoreceptors

Due to its superior photosensitivity in the visible wavelength region, amor phous selenium-based material is widely used as the basic photoreceptor mat erial in xerography. The optoelectronic properties of the samples were meas ured and calculated with photoinduced discharge curve (PIDC) by using Elect rostatic Paper Analyzer, and the initial surface potential (V-so), dark dec ay time (t(d)), photosensitivity (E-1/2) and residual potential (V-r) could be obtained. It is found that the contrast voltage which affects directly the resolution of image can be improved by the blocking layer between the b ulk (such as a-Se, a-As2Se3) and substrate (Al). Furthermore, the relations between thickness and optoelectronic properties of photoreceptor could be identified, and compared with different blocking layers and isothermal anne aling effect for the photoreceptors.