Low loss niobium oxides film deposited by ion beam sputter deposition

Citation
Cc. Lee et al., Low loss niobium oxides film deposited by ion beam sputter deposition, OPT QUANT E, 32(3), 2000, pp. 327-337
Citations number
25
Categorie Soggetti
Optics & Acoustics
Journal title
OPTICAL AND QUANTUM ELECTRONICS
ISSN journal
03068919 → ACNP
Volume
32
Issue
3
Year of publication
2000
Pages
327 - 337
Database
ISI
SICI code
0306-8919(200003)32:3<327:LLNOFD>2.0.ZU;2-F
Abstract
Thin films of niobium oxides are deposited by ion beam sputtering with a Ka ufman-type ion source. The deposition rate is function of the oxygen partia l pressure. There is an optimum oxygen pressure at 7 x 10(-5) Torr to depos ite a stoichiometric film. The as-deposited films are amorphous. The optica l parameters, including refractive index, extinction coefficient, and homog eneity, of the oxide films are influenced by post-baking temperature. The s urface morphology measured by an atomic force microscope (AFM) shows that t here is a certain range of optimum baking temperature which yields a smooth film and a good optical quality.