Side-mode injection locking characteristics of 150 mW AlGaAs semiconductorlasers

A high-power AlGaAs semiconductor laser was side-mode injection locked for laser cooling with frequency 1300 GHz away from free-running states. The in jection locking properties of the slave laser were measured with saturated absorption spectrum and optical heterodyne beat technique. The results show that the mode properties of master laser were completely transferred to th e slave laser. The dynamics of injection locking with respect to the driven current of the slave laser and injection light power was studied. The rela tionship of the locking bandwidth versus injection light power is consisten t with the theoretical calculation based on the multi-mode rate equation wi th an injection term. (C) 2000 Elsevier Science B.V. All rights reserved.