A theoretical study on thermo-analytical techniques in differential scanning calorimetry. Application to the crystallization of the semiconducting Sb0.12As0.40Se0.48 alloy

A procedure has been developed for analyzing the evolution with time of the volume fraction crystallized and for calculating the kinetic parameters at non-isothermal reactions in materials involving formation and growth of nu clei. Considering the: assumptions of extended volume and random nucleation , a general expression of the fraction crystallized as a function of time h as been obtained in isothermal crystallization process. The application of the crystallization rate to the nonisothermal processes has been carried ou t under the restriction of a nucleation which takes place early in the tran sformation and the nucleation frequency is zero thereafter. Under these con ditions, the kinetic parameters have been deduced by using the techniques o f data analysis of single-scan and multiple-scan The theoretical method dev eloped has been applied to the crystallization kinetics of the semiconducti ng Sb0.12As0.40Se0.48 alloy. The kinetic parameters obtained according to b oth techniques differ by only about 6%, which confirms the reliability and accuracy of the single-scan technique when calculating the above-mentioned parameters in non-isothermal crystallization processes.