Crossover from classical to random-field critical exponents in As-doped TbVO4

Citation
Ch. Choo et al., Crossover from classical to random-field critical exponents in As-doped TbVO4, PHYS REV B, 61(17), 2000, pp. 11197-11200
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
17
Year of publication
2000
Pages
11197 - 11200
Database
ISI
SICI code
1098-0121(20000501)61:17<11197:CFCTRC>2.0.ZU;2-Q
Abstract
Using birefringence techniques we have measured the critical exponents beta , gamma, and delta in As-doped TbVO4, a structural realization of the rando m-field Ising model where random strain fields are introduced by V-As size mismatch. For pure TbVO4 we observe the expected classical critical exponen ts, while for a mixed sample with 15% As concentration our results are beta = 0.31 +/- 0.03, gamma = 1.22 +/- 0.07, and delta = 4.2 +/- 0.7. These val ues are consistent with the critical exponents for the short-range pure Isi ng model in three dimensions in agreement with a prediction by Toh. The sus ceptibility data showed a crossover with temperature from classical to rand om-field critical behavior.