Unusual T-c variation with hole concentration in Bi2Sr2-xLaxCuO6+delta

Authors
Citation
My. Choi et Js. Kim, Unusual T-c variation with hole concentration in Bi2Sr2-xLaxCuO6+delta, PHYS REV B, 61(17), 2000, pp. 11321-11323
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
17
Year of publication
2000
Pages
11321 - 11323
Database
ISI
SICI code
1098-0121(20000501)61:17<11321:UTVWHC>2.0.ZU;2-A
Abstract
We have investigated the T-c variation with the hole concentration p in the La-doped Bi-2201 system, Bi2Sr2-xLaxCuO6+delta. It is found that the Bi-22 01 system does not follow the systematics in T-c and p observed in other hi gh-T-c cuprate superconductors (HTSC's). The T-c vs p characteristics are q uite similar to those observed in Zn-doped HTSC's. An exceptionally large r esidual resistivity component in the in-plane resistivity indicates that st rong potential scatterers of charge carriers reside in CuO2 planes and are responsible for the unusual T-c variation with p, as in the Zn-doped system s. However, contrary to the Zn-doped HTSC's, the strong scatter in the Bi-2 201 system is possibly a vacancy in the Cu site.