We have studied the temperature dependence of the Raman spectra of ceramic
bulk and thin-him samples of polycrystalline Ba1-xSrxTiO3 (x= 0, 0.1, 0.2,
and 0.3) in the range between room temperature and 350 degrees C. The ferro
electric to paraelectric phase-transition temperatures (Tc) have been estim
ated from the loss of intensity for several phonon modes belonging to the t
etragonal phase when the samples transform to the paraelectric cubic phase.
Similar to single crystalline BaTiO3, broad first-order Raman features are
found to persist well beyond Te in all the samples studied here. For bulk
samples, the estimated values of Te from the Raman studies agree well with
the Te values determined from the anomaly in the dielectric constant versus
temperature measurements. For thin films, however, the temperature measure
ments of the dielectric constant do not show any anomaly and the Raman sign
ature viz., the disappearance of several phonon modes at Tc, is used for de
termining Tc. We find that the values of Te in thin films are higher than t
hose of the bulk samples. This is attributed to the presence of intergrain
stresses in the submicron size grains in the thin films which might prevent
a complete phase transformation at the expected bulk Tc. Furthermore, a ne
w Raman mode has been seen at similar to 620 cm(-1) in all the thin-film sa
mples but not in bulk ceramics at all temperatures. This mode has also been
observed in polycrystalline bulk BaTiO3 powder under high pressure and it
most probably originates from the strain in the grain-boundary regions.