Y. Sawaki et al., Al-substitution effect on charge transport in La1-xSrxMnO3: Incoherent metallic state in a double-exchange ferromagnet, PHYS REV B, 61(17), 2000, pp. 11588-11593
Resistivity rho(T) was measured on (La1-xSrx)(Mn1-zAlz)O-3 single crystals
over a temperature T range 4-1000 K The doped Al decreases Curie temperatur
e T-C and increases rho(T). At low temperatures, the resistivity shows the
upturn when the residual resistivity reaches the critical value estimated a
bout 300 mu Omega cm. This upturn is most likely to originate from the carr
ier localization and therefore mean free path I reaches Fermi wavelength la
mbda(F) at this critical resistivity. This suggests that the basic assumpti
on of an ordinary metal, l>lambda(F), is violated when rho(T) exceeds this
critical value even though rho(T) is metallic (d rho/dT>0). This "coherent-
incoherent" crossover is also suggested by the recent optical studies. The
metallic rho(T) above T-C, on the other hand, becomes insulating by only a
few percent Al. The conduction above T-C is dominated by a short-range corr
elation between the t(2g) spins.