Tunneling magnetoresistance and induced domain structure in Al2O3-based junctions

Citation
M. Hehn et al., Tunneling magnetoresistance and induced domain structure in Al2O3-based junctions, PHYS REV B, 61(17), 2000, pp. 11643-11648
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
17
Year of publication
2000
Pages
11643 - 11648
Database
ISI
SICI code
1098-0121(20000501)61:17<11643:TMAIDS>2.0.ZU;2-3
Abstract
Magnetization reversal in sputtered Co and oxidized Co (CoOx) layers an stu died using transport measurements and magneto-optic Kerr effect. When assoc iated in a magnetic tunnel junction, the two magnetic layers show a strong ferromagnetic coupling. Using the tunnel magnetoresistive effect as a probe for micromagnetic studies, we show the existence of an unexpected domain s tructure in the soft Co layer. This domain structure originates from the du plication of the domain structure of the hard CoOx magnetic layer template into the soft Co layer via the ferromagnetic coupling.