Electric-field gradients on mercury sites of the HgBa2CuO4+delta high-T-c s
uperconductor were measured with the perturbed angular correlation techniqu
e and interpreted with ab initio calculations. Under oxygen annealing, an a
symmetric electric-field gradient has been assigned to the presence of sing
le oxygen atoms, O-delta, which are located in the Hg planes. These experim
ents provide an atomic scale tool for studying charge-density variations oc
curing in the neighborhood of the Hg atoms, which can be induced, particula
rly, by pointlike defects.