U. Kramer et al., Subcellular localization and speciation of nickel in hyperaccumulator and non-accumulator Thlaspi species, PLANT PHYSL, 122(4), 2000, pp. 1343-1353
The ability of Thlaspi goesingense Halacsy to hyperaccumulate Ni appears to
be governed by its extraordinary degree of Ni tolerance. However, the phys
iological basis of this tolerance mechanism is unknown. We have investigate
d the role of vacuolar compartmentalization and chelation in this Ni tolera
nce. A direct comparison of Ni contents of vacuoles from leaves of T. goesi
ngense and from the non-tolerant non-accumulator Thlaspi arvense L. showed
that the hyperaccumulator accumulates approximately 2-fold more Ni in the v
acuole than the non-accumulator under Ni exposure conditions that were non-
toxic to both species. Using x-ray absorption spectroscopy we have been abl
e to determine the likely identity of the compounds involved in chelating N
i within the leaf tissues of the hyperaccumulator and non-accumulator. This
revealed that the majority of leaf Ni in the hyperaccumulator was associat
ed with the cell wall, with the remaining Ni being associated with citrate
and His, which we interpret as being localized primarily in the vacuolar an
d cytoplasm, respectively. This distribution of Ni was remarkably similar t
o that obtained by cell fractionation, supporting the hypothesis that in th
e hyperaccumulator, intracellular Ni is predominantly localized in the vacu
ole as a Ni-organic acid complex.