LASING CHARACTERISTICS OF A DIODE-PUMPED CAGDALO4-ND3+ CRYSTAL

Citation
Aa. Lagatskii et al., LASING CHARACTERISTICS OF A DIODE-PUMPED CAGDALO4-ND3+ CRYSTAL, Kvantovaa elektronika, 24(1), 1997, pp. 17-19
Citations number
13
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
03687147
Volume
24
Issue
1
Year of publication
1997
Pages
17 - 19
Database
ISI
SICI code
0368-7147(1997)24:1<17:LCOADC>2.0.ZU;2-P
Abstract
A new Nd3+-doped CaGdAlO4 laser crystal was investigated. This crystal was grown by the Czochralski method and the atomic concentration of N d3+ in the melt was 2%. The absorption and luminescence spectra were a nalysed and the Stark structure of the upper and lower active levels w as determined. The lifetime of the upper level was similar to 140 mu s . The stimulated emission cross section at the 1078 nm wavelength was 1.1.10(-19) sm(-2) for the E parallel to c polarisation. A GaAlAs diod e, with an output power of 3 W emitted at the wavelength 806.5 Mn, was used as the pump source. The slope efficiency was 37% at the 1078 mm wavelength when the output-mirror transmission was 5%. The output radi ation power of the crystal laser was 360 mW when the absorbed pump pow er was 1.29 W.