A model for the mechanism of chlorinated plasma etching of aluminium

A model of microscopic etching of aluminium by chlorine plasma is proposed. It takes into account the contribution of spontaneous etching as well as t he activation by ionic bombardment. The corresponding simulations predict, using a finite element method, the temporal and bidimensional topological e volution of aluminium profiles during etching. The predictions of the model are compared with micrographs of experimental microscopic aluminium profil es in different configurations, and this comparison reveals a very good agr eement.