STUDY ON THE METAL-INSULATOR-TRANSITION OF LA1-XSRXTIO3 AND Y1-XCAXTIO3

Authors
KUMAGAI K SUZUKI T TAGUCHI Y OKADA Y FUJISHIMA Y TOKURA Y
Citation
K. Kumagai et al., STUDY ON THE METAL-INSULATOR-TRANSITION OF LA1-XSRXTIO3 AND Y1-XCAXTIO3, Physica. B, Condensed matter, 194, 1994, pp. 463-464
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
194
Year of publication
1994
Part
1
Pages
463 - 464
Database
ISI
SICI code
0921-4526(1994)194:<463:SOTMOL>2.0.ZU;2-T
Abstract
Carrier-doping (or band-filling) dependence of electronic states is in vestigated in La1-xSr(x)TiO3 and Y1-xCa(x)TiO3 by heat capacity measur ement. Coefficient of electronic specific heat, gamma(i), is enhanced significantly near the metal-insulator phase transition boundary, indi cating a divergent increase of the effective electron mass due to the strong electronic correlations on approaching the metal-insulator tran sition boundary.