Cu contamination control for advanced interconnect manufacturing

Citation
D. Dornisch et al., Cu contamination control for advanced interconnect manufacturing, SOL ST TECH, 43(5), 2000, pp. 137
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
SOLID STATE TECHNOLOGY
ISSN journal
0038111X → ACNP
Volume
43
Issue
5
Year of publication
2000
Database
ISI
SICI code
0038-111X(200005)43:5<137:CCCFAI>2.0.ZU;2-Y
Abstract
As IC manufacturers are moving to copper metallization for their most advan ced products, contamination control presents a big challenge for the back-e nd-of-line manufacturing processes. Copper contamination could be introduce d or spread from various sources, such as copper processing tools or wafers with open copper surfaces, and might cause catastrophic effects on product ion. By looking into a generic copper damascene process flow, requirements for critical cleaning steps can be identified, especially for fabs with mix ed conventional aluminum and copper metallization.