Chemical kinetics in chemical vapor deposition: growth of silicon dioxide from tetraethoxysilane (TEOS)

Chemical reactions in the gas-phase and on surfaces are important in the ch emical vapor deposition (CVD) of materials for microelectronic applications . General approaches for modeling the homogeneous and heterogeneous kinetic s in CVD are discussed. A software framework for implementing the theory ut ilizing the CHEMKIN suite of codes is presented. Specific examples are draw n from the CVD of SiO2 using tetraethoxysilane (TEOS). Experimental molecul ar beam reactive-sticking coefficient studies were employed to extract surf ace-reaction rate constants. Numerical simulations were used to analyze the molecular-beam experiments and low-pressure tube furnace data, illustratin g the general modeling approach. (C) 2000 Elsevier Science S.A. All rights reserved.